Critical Dimension Solution

STEP 0: Pre-Calculation Summary
Formula Used
Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture
CD = k1*λL/NA
This formula uses 4 Variables
Variables Used
Critical Dimension - (Measured in Meter) - Critical Dimension in semiconductor manufacturing refers to the smallest feature size or the smallest measurable size in a given process.
Process Dependent Constant - Process Dependent Constant is specific to the details of the semiconductor manufacturing process and the technology node being utilized.
Wavelength of Light - (Measured in Meter) - Wavelength of Light is the wavelength of the light used in photolithography process.
Numerical Aperture - Numerical Aperture is a parameter used in optics to describe the ability of an optical system.In the context of semiconductor manufacturing and photolithography.
STEP 1: Convert Input(s) to Base Unit
Process Dependent Constant: 1.56 --> No Conversion Required
Wavelength of Light: 223 Nanometer --> 2.23E-07 Meter (Check conversion here)
Numerical Aperture: 0.717 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
CD = k1L/NA --> 1.56*2.23E-07/0.717
Evaluating ... ...
CD = 4.85188284518829E-07
STEP 3: Convert Result to Output's Unit
4.85188284518829E-07 Meter -->485.188284518829 Nanometer (Check conversion here)
FINAL ANSWER
485.188284518829 485.1883 Nanometer <-- Critical Dimension
(Calculation completed in 00.004 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore
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15 MOS IC Fabrication Calculators

Switching Point Voltage
Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))
Drain Current of MOSFET at Saturation Region
Go Drain Current = 0.5*Electron Mobility*Oxide Capacitance*Transistor's Width*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)/Transistor's Length
Body Effect in MOSFET
Go Threshold Voltage = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to the Body)-sqrt(2*Bulk Fermi Potential))
Donor Dopant Concentration
Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area)
Channel Resistance
Go Channel Resistance = Transistor's Length*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2/(Electron Mobility*Oxide Capacitance*Transistor's Width*2)
Acceptor Dopant Concentration
Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance per Unit Area)
Maximum Dopant Concentration
Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))
Propagation Time
Go Propagation Time = 0.7*Number of Pass Transistors*(Number of Pass Transistors+1)/2*Resistance in MOSFET*Load Capaacitance
Drift Current Density due to Free Electrons
Go Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
MOSFET Unity-Gain Frequency
Go Unity Gain Frequency in MOSFET = 1/(2*pi)*MOSFET Transconductance/(Gate Source Capacitance+Gate Drain Capacitance)
Drift Current Density due to Holes
Go Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
Critical Dimension
Go Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture
Depth of Focus
Go Depth of Focus = Proportionality Factor*Wavelength of Light/(Numerical Aperture^2)
Equivalent Oxide Thickness
Go Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material)
Die Per Wafer
Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Critical Dimension Formula

Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture
CD = k1*λL/NA

What factors influence CD in semiconductor fabrication?

CD is influenced by various factors, including the lithography process, photomask quality, exposure wavelength, numerical aperture, and the characteristics of the photoresist used.

How to Calculate Critical Dimension?

Critical Dimension calculator uses Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture to calculate the Critical Dimension, The Critical Dimension formula is defined as semiconductor manufacturing refers to the smallest feature size or the smallest measurable size in a given process. Critical Dimension is denoted by CD symbol.

How to calculate Critical Dimension using this online calculator? To use this online calculator for Critical Dimension, enter Process Dependent Constant (k1), Wavelength of Light L) & Numerical Aperture (NA) and hit the calculate button. Here is how the Critical Dimension calculation can be explained with given input values -> 4.9E+11 = 1.56*2.23E-07/0.717.

FAQ

What is Critical Dimension?
The Critical Dimension formula is defined as semiconductor manufacturing refers to the smallest feature size or the smallest measurable size in a given process and is represented as CD = k1L/NA or Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture. Process Dependent Constant is specific to the details of the semiconductor manufacturing process and the technology node being utilized, Wavelength of Light is the wavelength of the light used in photolithography process & Numerical Aperture is a parameter used in optics to describe the ability of an optical system.In the context of semiconductor manufacturing and photolithography.
How to calculate Critical Dimension?
The Critical Dimension formula is defined as semiconductor manufacturing refers to the smallest feature size or the smallest measurable size in a given process is calculated using Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture. To calculate Critical Dimension, you need Process Dependent Constant (k1), Wavelength of Light L) & Numerical Aperture (NA). With our tool, you need to enter the respective value for Process Dependent Constant, Wavelength of Light & Numerical Aperture and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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