Die Per Wafer Solution

STEP 0: Pre-Calculation Summary
Formula Used
Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)
DPW = (pi*dw^2)/(4*Sd)
This formula uses 1 Constants, 3 Variables
Constants Used
pi - Archimedes' constant Value Taken As 3.14159265358979323846264338327950288
Variables Used
Die Per Wafer - Die Per Wafer means the number of dies that can be made from a single wafer.
Wafer Diameter - (Measured in Meter) - Wafer Diameter refers to the size of the silicon wafers used in the semiconductor manufacturing process.
Size of Each Die - (Measured in Square Meter) - Size of Each Die is the size of each die used in the semiconductor manufacturing process.
STEP 1: Convert Input(s) to Base Unit
Wafer Diameter: 150 Millimeter --> 0.15 Meter (Check conversion here)
Size of Each Die: 22 Square Millimeter --> 2.2E-05 Square Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
DPW = (pi*dw^2)/(4*Sd) --> (pi*0.15^2)/(4*2.2E-05)
Evaluating ... ...
DPW = 803.248121656481
STEP 3: Convert Result to Output's Unit
803.248121656481 --> No Conversion Required
FINAL ANSWER
803.248121656481 803.2481 <-- Die Per Wafer
(Calculation completed in 00.004 seconds)

Credits

Created by banuprakash
Dayananda Sagar College of Engineering (DSCE), Bangalore
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Verified by Santhosh Yadav
Dayananda Sagar College Of Engineering (DSCE), Banglore
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15 MOS IC Fabrication Calculators

Switching Point Voltage
Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))
Drain Current of MOSFET at Saturation Region
Go Drain Current = 0.5*Electron Mobility*Oxide Capacitance*Transistor's Width*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)/Transistor's Length
Body Effect in MOSFET
Go Threshold Voltage = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to the Body)-sqrt(2*Bulk Fermi Potential))
Donor Dopant Concentration
Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area)
Channel Resistance
Go Channel Resistance = Transistor's Length*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2/(Electron Mobility*Oxide Capacitance*Transistor's Width*2)
Acceptor Dopant Concentration
Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance per Unit Area)
Maximum Dopant Concentration
Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))
Propagation Time
Go Propagation Time = 0.7*Number of Pass Transistors*(Number of Pass Transistors+1)/2*Resistance in MOSFET*Load Capaacitance
Drift Current Density due to Free Electrons
Go Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
MOSFET Unity-Gain Frequency
Go Unity Gain Frequency in MOSFET = 1/(2*pi)*MOSFET Transconductance/(Gate Source Capacitance+Gate Drain Capacitance)
Drift Current Density due to Holes
Go Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
Critical Dimension
Go Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture
Depth of Focus
Go Depth of Focus = Proportionality Factor*Wavelength of Light/(Numerical Aperture^2)
Equivalent Oxide Thickness
Go Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material)
Die Per Wafer
Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Die Per Wafer Formula

Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)
DPW = (pi*dw^2)/(4*Sd)

Why is die per wafer important?

Die per wafer is crucial for assessing the economic viability of semiconductor manufacturing. Higher die per wafer yields lead to more cost-effective production, contributing to the overall competitiveness of a semiconductor fabrication facility.

How to Calculate Die Per Wafer?

Die Per Wafer calculator uses Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die) to calculate the Die Per Wafer, The Die Per Wafer formula is defined as the number of dies that can be made from a single wafer. Die Per Wafer is denoted by DPW symbol.

How to calculate Die Per Wafer using this online calculator? To use this online calculator for Die Per Wafer, enter Wafer Diameter (dw) & Size of Each Die (Sd) and hit the calculate button. Here is how the Die Per Wafer calculation can be explained with given input values -> 803.2481 = (pi*0.15^2)/(4*2.2E-05).

FAQ

What is Die Per Wafer?
The Die Per Wafer formula is defined as the number of dies that can be made from a single wafer and is represented as DPW = (pi*dw^2)/(4*Sd) or Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die). Wafer Diameter refers to the size of the silicon wafers used in the semiconductor manufacturing process & Size of Each Die is the size of each die used in the semiconductor manufacturing process.
How to calculate Die Per Wafer?
The Die Per Wafer formula is defined as the number of dies that can be made from a single wafer is calculated using Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die). To calculate Die Per Wafer, you need Wafer Diameter (dw) & Size of Each Die (Sd). With our tool, you need to enter the respective value for Wafer Diameter & Size of Each Die and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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