Die Per Wafer Calculator

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MOS IC Fabrication

Bipolar IC Fabrication

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✖Wafer Diameter refers to the size of the silicon wafers used in the semiconductor manufacturing process. These wafers serve as the base material upon which semiconductor devices.ⓘ Wafer Diameter [d_w]			+10% -10%
✖Size of Each Die refers to the physical dimensions of an individual semiconductor chip or integrated circuit (IC) as it is fabricated on a silicon wafer.ⓘ Size of Each Die [S_d]			+10% -10%

✖Die Per Wafer means the number of dies that can be made from a single wafer.ⓘ Die Per Wafer [DPW]

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Formula

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Die Per Wafer

Formula

`"DPW" = (pi*"d"_{"w"}^2)/(4*"S"_{"d"})`

Example

`"803.2481"=(pi*("150mm")^2)/(4*"22mm²")`

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Die Per Wafer Solution

STEP 0: Pre-Calculation Summary

Formula Used

Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)
DPW = (pi*d_w^2)/(4*S_d)
This formula uses 1 Constants, 3 Variables

Constants Used

pi - Archimedes' constant Value Taken As 3.14159265358979323846264338327950288

Variables Used

Die Per Wafer - Die Per Wafer means the number of dies that can be made from a single wafer.
Wafer Diameter - (Measured in Meter) - Wafer Diameter refers to the size of the silicon wafers used in the semiconductor manufacturing process. These wafers serve as the base material upon which semiconductor devices.
Size of Each Die - (Measured in Square Meter) - Size of Each Die refers to the physical dimensions of an individual semiconductor chip or integrated circuit (IC) as it is fabricated on a silicon wafer.

STEP 1: Convert Input(s) to Base Unit

Wafer Diameter: 150 Millimeter --> 0.15 Meter (Check conversion here)
Size of Each Die: 22 Square Millimeter --> 2.2E-05 Square Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

DPW = (pi*d_w^2)/(4*S_d) --> (pi*0.15^2)/(4*2.2E-05)

Evaluating ... ...

DPW = 803.248121656481

STEP 3: Convert Result to Output's Unit

803.248121656481 --> No Conversion Required

FINAL ANSWER

803.248121656481 ≈ 803.2481 <-- Die Per Wafer

(Calculation completed in 00.004 seconds)

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Created by banuprakash

Dayananda Sagar College of Engineering (DSCE), Bangalore

banuprakash has created this Calculator and 50+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

Die Per Wafer Formula

Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)
DPW = (pi*d_w^2)/(4*S_d)

Why is die per wafer important?

Die per wafer is crucial for assessing the economic viability of semiconductor manufacturing. Higher die per wafer yields lead to more cost-effective production, contributing to the overall competitiveness of a semiconductor fabrication facility.

How to Calculate Die Per Wafer?

Die Per Wafer calculator uses Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die) to calculate the Die Per Wafer, The Die Per Wafer formula is defined as the number of individual semiconductor chips (also known as dies) that can be fabricated on a single silicon wafer during the semiconductor manufacturing process. Die Per Wafer is denoted by DPW symbol.

How to calculate Die Per Wafer using this online calculator? To use this online calculator for Die Per Wafer, enter Wafer Diameter (d_w) & Size of Each Die (S_d) and hit the calculate button. Here is how the Die Per Wafer calculation can be explained with given input values -> 803.2481 = (pi*0.15^2)/(4*2.2E-05).

FAQ

What is Die Per Wafer?

The Die Per Wafer formula is defined as the number of individual semiconductor chips (also known as dies) that can be fabricated on a single silicon wafer during the semiconductor manufacturing process and is represented as DPW = (pi*d_w^2)/(4*S_d) or Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die). Wafer Diameter refers to the size of the silicon wafers used in the semiconductor manufacturing process. These wafers serve as the base material upon which semiconductor devices & Size of Each Die refers to the physical dimensions of an individual semiconductor chip or integrated circuit (IC) as it is fabricated on a silicon wafer.

How to calculate Die Per Wafer?

The Die Per Wafer formula is defined as the number of individual semiconductor chips (also known as dies) that can be fabricated on a single silicon wafer during the semiconductor manufacturing process is calculated using Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die). To calculate Die Per Wafer, you need Wafer Diameter (d_w) & Size of Each Die (S_d). With our tool, you need to enter the respective value for Wafer Diameter & Size of Each Die and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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