Emitter Injection Efficiency given Doping Constants Calculator

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✖Doping on N-side refers to the process of introducing specific types of impurities into the N-type semiconductor region of a semiconductor device.ⓘ Doping on N-side [N_dn]			+10% -10%
✖Doping On P-side refers to the process of introducing specific types of impurities into the P-type semiconductor region of a semiconductor device.ⓘ Doping on P-side [N_dp]			+10% -10%

✖Emmitter Injection Efficiency is the ratio of the electron current flowing in the emitter to the total current across the emitter base junction.ⓘ Emitter Injection Efficiency given Doping Constants [γ]

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Emitter Injection Efficiency given Doping Constants

Formula

`"γ" = "N"_{"dn"}/("N"_{"dn"}+"N"_{"dp"})`

Example

`"0.727273"="4.8/cm³"/("4.8/cm³"+"1.8/cm³")`

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Emitter Injection Efficiency given Doping Constants Solution

STEP 0: Pre-Calculation Summary

Formula Used

Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)
γ = N_dn/(N_dn+N_dp)
This formula uses 3 Variables

Variables Used

Emmitter Injection Efficiency - Emmitter Injection Efficiency is the ratio of the electron current flowing in the emitter to the total current across the emitter base junction.
Doping on N-side - (Measured in 1 per Cubic Meter) - Doping on N-side refers to the process of introducing specific types of impurities into the N-type semiconductor region of a semiconductor device.
Doping on P-side - (Measured in 1 per Cubic Meter) - Doping On P-side refers to the process of introducing specific types of impurities into the P-type semiconductor region of a semiconductor device.

STEP 1: Convert Input(s) to Base Unit

Doping on N-side: 4.8 1 per Cubic Centimeter --> 4800000 1 per Cubic Meter (Check conversion here)
Doping on P-side: 1.8 1 per Cubic Centimeter --> 1800000 1 per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

γ = N_dn/(N_dn+N_dp) --> 4800000/(4800000+1800000)

Evaluating ... ...

γ = 0.727272727272727

STEP 3: Convert Result to Output's Unit

0.727272727272727 --> No Conversion Required

FINAL ANSWER

0.727272727272727 ≈ 0.727273 <-- Emmitter Injection Efficiency

(Calculation completed in 00.004 seconds)

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Created by banuprakash

Dayananda Sagar College of Engineering (DSCE), Bangalore

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Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

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< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Emitter Injection Efficiency given Doping Constants Formula

Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)
γ = N_dn/(N_dn+N_dp)

How does doping affect the Figure of Merit in semiconductors?

Doping can influence the electrical and thermal properties of a semiconductor. Properly chosen doping concentrations can enhance the electrical conductivity.

How to Calculate Emitter Injection Efficiency given Doping Constants?

Emitter Injection Efficiency given Doping Constants calculator uses Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side) to calculate the Emmitter Injection Efficiency, Emitter Injection Efficiency given Doping Constants formula is defined as measure of how efficiently a material converts heat into electricity (or vice versa) in thermoelectric applications. Emmitter Injection Efficiency is denoted by γ symbol.

How to calculate Emitter Injection Efficiency given Doping Constants using this online calculator? To use this online calculator for Emitter Injection Efficiency given Doping Constants, enter Doping on N-side (N_dn) & Doping on P-side (N_dp) and hit the calculate button. Here is how the Emitter Injection Efficiency given Doping Constants calculation can be explained with given input values -> 0.4 = 4.8/(4.8+1.8).

FAQ

What is Emitter Injection Efficiency given Doping Constants?

Emitter Injection Efficiency given Doping Constants formula is defined as measure of how efficiently a material converts heat into electricity (or vice versa) in thermoelectric applications and is represented as γ = N_dn/(N_dn+N_dp) or Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side). Doping on N-side refers to the process of introducing specific types of impurities into the N-type semiconductor region of a semiconductor device & Doping On P-side refers to the process of introducing specific types of impurities into the P-type semiconductor region of a semiconductor device.

How to calculate Emitter Injection Efficiency given Doping Constants?

Emitter Injection Efficiency given Doping Constants formula is defined as measure of how efficiently a material converts heat into electricity (or vice versa) in thermoelectric applications is calculated using Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side). To calculate Emitter Injection Efficiency given Doping Constants, you need Doping on N-side (N_dn) & Doping on P-side (N_dp). With our tool, you need to enter the respective value for Doping on N-side & Doping on P-side and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Emmitter Injection Efficiency?

In this formula, Emmitter Injection Efficiency uses Doping on N-side & Doping on P-side. We can use 1 other way(s) to calculate the same, which is/are as follows -

Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

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