Equivalent Large Signal Capacitance Solution

STEP 0: Pre-Calculation Summary
Formula Used
Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)
Ceq = (1/(V2-V1))*int(Cj*x,x,V1,V2)
This formula uses 1 Functions, 4 Variables
Functions Used
int - The definite integral can be used to calculate net signed area, which is the area above the x -axis minus the area below the x -axis., int(expr, arg, from, to)
Variables Used
Equivalent Large Signal Capacitance - (Measured in Farad) - Equivalent Large Signal Capacitance is a simplified model used to represent the combined effect of the junction capacitances at low frequencies (large signal regime).
Final Voltage - (Measured in Volt) - Final Voltage refers to the voltage level achieved or measured at the conclusion of a particular process or event.
Initial Voltage - (Measured in Volt) - Initial Voltage refer to the voltage present at a specific point in a circuit at the beginning of a certain operation or under specific conditions.
Junction Capacitance - (Measured in Farad) - Junction Capacitance refers to the capacitance arising from the depletion region between the source/drain terminals and the substrate.
STEP 1: Convert Input(s) to Base Unit
Final Voltage: 6.135 Nanovolt --> 6.135E-09 Volt (Check conversion here)
Initial Voltage: 5.42 Nanovolt --> 5.42E-09 Volt (Check conversion here)
Junction Capacitance: 95009 Farad --> 95009 Farad No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ceq = (1/(V2-V1))*int(Cj*x,x,V1,V2) --> (1/(6.135E-09-5.42E-09))*int(95009*x,x,5.42E-09,6.135E-09)
Evaluating ... ...
Ceq = 0.0005489144975
STEP 3: Convert Result to Output's Unit
0.0005489144975 Farad --> No Conversion Required
FINAL ANSWER
0.0005489144975 0.000549 Farad <-- Equivalent Large Signal Capacitance
(Calculation completed in 00.004 seconds)

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Created by Vignesh Naidu
Vellore Institute of Technology (VIT), Vellore,Tamil Nadu
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21 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor
Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))
Pull down Current in Linear Region
Go Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))
Node Voltage at Given Instance
Go Node Voltage at Given Instance = (Transconductance Factor/Node Capacitance)*int(exp(-(1/(Node Resistance*Node Capacitance))*(Time Period-x))*Current Flowing into Node*x,x,0,Time Period)
Pull down Current in Saturation Region
Go Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)
Saturation Time
Go Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)
Drain Current Flowing through MOS Transistor
Go Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)
Time Delay when NMOS Operates in Linear Region
Go Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)
Depletion Region Charge Density
Go Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))
Depth of Depletion Region Associated with Drain
Go Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))
Drain Current in Saturation Region in MOS Transistor
Go Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)
Fermi Potential for P Type
Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
Maximum Depletion Depth
Go Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))
Fermi Potential for N Type
Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)
Equivalent Large Signal Capacitance
Go Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)
Built in Potential at Depletion Region
Go Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))
Depth of Depletion Region Associated with Source
Go Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))
Substrate Bias Coefficient
Go Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance
Average Power Dissipated over Period of Time
Go Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)
Equivalent Large Signal Junction Capacitance
Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor
Work Function in MOSFET
Go Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)
Zero Bias Sidewall Junction Capacitance per Unit Length
Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Equivalent Large Signal Capacitance Formula

Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)
Ceq = (1/(V2-V1))*int(Cj*x,x,V1,V2)

What are the Applications of Equivalent Large Signal Capacitance ?

1. Circuit analysis and design: It simplifies calculations of charging and discharging times in MOSFET circuits, aiding in predicting switching speeds and transient behavior.

2. SPICE simulations: SPICE (Simulation Program with Integrated Circuit Emphasis) is a widely used software for circuit analysis. SPICE models for MOSFETs often include this as a parameter to represent the low-frequency capacitance.

How to Calculate Equivalent Large Signal Capacitance?

Equivalent Large Signal Capacitance calculator uses Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage) to calculate the Equivalent Large Signal Capacitance, The Equivalent Large Signal Capacitance formula is defined as a simplified model used to represent the combined effect of the junction capacitances at low frequencies (large signal regime). Equivalent Large Signal Capacitance is denoted by Ceq symbol.

How to calculate Equivalent Large Signal Capacitance using this online calculator? To use this online calculator for Equivalent Large Signal Capacitance, enter Final Voltage (V2), Initial Voltage (V1) & Junction Capacitance (Cj) and hit the calculate button. Here is how the Equivalent Large Signal Capacitance calculation can be explained with given input values -> 0.000549 = (1/(6.135E-09-5.42E-09))*int(95009*x,x,5.42E-09,6.135E-09).

FAQ

What is Equivalent Large Signal Capacitance?
The Equivalent Large Signal Capacitance formula is defined as a simplified model used to represent the combined effect of the junction capacitances at low frequencies (large signal regime) and is represented as Ceq = (1/(V2-V1))*int(Cj*x,x,V1,V2) or Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage). Final Voltage refers to the voltage level achieved or measured at the conclusion of a particular process or event, Initial Voltage refer to the voltage present at a specific point in a circuit at the beginning of a certain operation or under specific conditions & Junction Capacitance refers to the capacitance arising from the depletion region between the source/drain terminals and the substrate.
How to calculate Equivalent Large Signal Capacitance?
The Equivalent Large Signal Capacitance formula is defined as a simplified model used to represent the combined effect of the junction capacitances at low frequencies (large signal regime) is calculated using Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage). To calculate Equivalent Large Signal Capacitance, you need Final Voltage (V2), Initial Voltage (V1) & Junction Capacitance (Cj). With our tool, you need to enter the respective value for Final Voltage, Initial Voltage & Junction Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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