Equivalent Oxide Thickness Solution

STEP 0: Pre-Calculation Summary
Formula Used
Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material)
EOT = thigh-k*(3.9/khigh-k)
This formula uses 3 Variables
Variables Used
Equivalent Oxide Thickness - (Measured in Meter) - Equivalent Oxide Thickness is a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device.
Thickness of the Material - (Measured in Meter) - Thickness of the Material is the thickness of the given material.
Dielectric Constant of Material - Dielectric Constant of Material is a measure of a material's ability to store electrical energy in an electric field.
STEP 1: Convert Input(s) to Base Unit
Thickness of the Material: 8.5 Nanometer --> 8.5E-09 Meter (Check conversion here)
Dielectric Constant of Material: 2.26 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
EOT = thigh-k*(3.9/khigh-k) --> 8.5E-09*(3.9/2.26)
Evaluating ... ...
EOT = 1.46681415929204E-08
STEP 3: Convert Result to Output's Unit
1.46681415929204E-08 Meter -->14.6681415929204 Nanometer (Check conversion here)
FINAL ANSWER
14.6681415929204 14.66814 Nanometer <-- Equivalent Oxide Thickness
(Calculation completed in 00.004 seconds)

Credits

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Dayananda Sagar College of Engineering (DSCE), Bangalore
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Dayananda Sagar College Of Engineering (DSCE), Banglore
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15 MOS IC Fabrication Calculators

Switching Point Voltage
Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))
Drain Current of MOSFET at Saturation Region
Go Drain Current = 0.5*Electron Mobility*Oxide Capacitance*Transistor's Width*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)/Transistor's Length
Body Effect in MOSFET
Go Threshold Voltage = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to the Body)-sqrt(2*Bulk Fermi Potential))
Donor Dopant Concentration
Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area)
Channel Resistance
Go Channel Resistance = Transistor's Length*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2/(Electron Mobility*Oxide Capacitance*Transistor's Width*2)
Acceptor Dopant Concentration
Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance per Unit Area)
Maximum Dopant Concentration
Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))
Propagation Time
Go Propagation Time = 0.7*Number of Pass Transistors*(Number of Pass Transistors+1)/2*Resistance in MOSFET*Load Capaacitance
Drift Current Density due to Free Electrons
Go Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
MOSFET Unity-Gain Frequency
Go Unity Gain Frequency in MOSFET = 1/(2*pi)*MOSFET Transconductance/(Gate Source Capacitance+Gate Drain Capacitance)
Drift Current Density due to Holes
Go Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
Critical Dimension
Go Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture
Depth of Focus
Go Depth of Focus = Proportionality Factor*Wavelength of Light/(Numerical Aperture^2)
Equivalent Oxide Thickness
Go Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material)
Die Per Wafer
Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness Formula

Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material)
EOT = thigh-k*(3.9/khigh-k)

Why is EOT important in semiconductor devices?

EOT is crucial in determining the performance of transistors. As device dimensions shrink, minimizing EOT becomes essential to maintain proper control over the flow of electrons, ensuring efficient and reliable transistor operation.

How to Calculate Equivalent Oxide Thickness?

Equivalent Oxide Thickness calculator uses Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material) to calculate the Equivalent Oxide Thickness, The Equivalent Oxide Thickness formula is defined as a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device, such as a MOSFET. Equivalent Oxide Thickness is denoted by EOT symbol.

How to calculate Equivalent Oxide Thickness using this online calculator? To use this online calculator for Equivalent Oxide Thickness, enter Thickness of the Material (thigh-k) & Dielectric Constant of Material (khigh-k) and hit the calculate button. Here is how the Equivalent Oxide Thickness calculation can be explained with given input values -> 1.5E+10 = 8.5E-09*(3.9/2.26).

FAQ

What is Equivalent Oxide Thickness?
The Equivalent Oxide Thickness formula is defined as a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device, such as a MOSFET and is represented as EOT = thigh-k*(3.9/khigh-k) or Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material). Thickness of the Material is the thickness of the given material & Dielectric Constant of Material is a measure of a material's ability to store electrical energy in an electric field.
How to calculate Equivalent Oxide Thickness?
The Equivalent Oxide Thickness formula is defined as a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device, such as a MOSFET is calculated using Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material). To calculate Equivalent Oxide Thickness, you need Thickness of the Material (thigh-k) & Dielectric Constant of Material (khigh-k). With our tool, you need to enter the respective value for Thickness of the Material & Dielectric Constant of Material and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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