Equivalent Oxide Thickness Calculator

↳

Electronics

Chemical Engineering

Civil

Electrical

Electronics and Instrumentation

Materials Science

Mechanical

Production Engineering

⤿

MOS IC Fabrication

Bipolar IC Fabrication

Schmitt Trigger

✖Thickness of Material is the thickness of the given material. It refers to the physical dimension of an object measured perpendicular to its surface.ⓘ Thickness of Material [t_high-k]			+10% -10%
✖Dielectric Constant of Material is a measure of a material's ability to store electrical energy in an electric field.ⓘ Dielectric Constant of Material [k_high-k]			+10% -10%

✖Equivalent Oxide Thickness is a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device.ⓘ Equivalent Oxide Thickness [EOT]

⎘ Copy

👎

Formula

✖

Equivalent Oxide Thickness

Formula

`"EOT" = "t"_{"high-k"}*(3.9/"k"_{"high-k"})`

Example

`"14.66814nm"="8.5nm"*(3.9/"2.26")`

Calculator

LaTeX

Reset

👍

Download MOS IC Fabrication Formulas PDF PDF Image

Equivalent Oxide Thickness Solution

STEP 0: Pre-Calculation Summary

Formula Used

Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)
EOT = t_high-k*(3.9/k_high-k)
This formula uses 3 Variables

Variables Used

Equivalent Oxide Thickness - (Measured in Meter) - Equivalent Oxide Thickness is a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device.
Thickness of Material - (Measured in Meter) - Thickness of Material is the thickness of the given material. It refers to the physical dimension of an object measured perpendicular to its surface.
Dielectric Constant of Material - Dielectric Constant of Material is a measure of a material's ability to store electrical energy in an electric field.

STEP 1: Convert Input(s) to Base Unit

Thickness of Material: 8.5 Nanometer --> 8.5E-09 Meter (Check conversion here)
Dielectric Constant of Material: 2.26 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

EOT = t_high-k*(3.9/k_high-k) --> 8.5E-09*(3.9/2.26)

Evaluating ... ...

EOT = 1.46681415929204E-08

STEP 3: Convert Result to Output's Unit

1.46681415929204E-08 Meter -->14.6681415929204 Nanometer (Check conversion here)

FINAL ANSWER

14.6681415929204 ≈ 14.66814 Nanometer <-- Equivalent Oxide Thickness

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » Integrated Circuits (IC) » MOS IC Fabrication » Equivalent Oxide Thickness

Credits

Created by banuprakash

Dayananda Sagar College of Engineering (DSCE), Bangalore

banuprakash has created this Calculator and 50+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

Equivalent Oxide Thickness Formula

Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)
EOT = t_high-k*(3.9/k_high-k)

Why is EOT important in semiconductor devices?

EOT is crucial in determining the performance of transistors. As device dimensions shrink, minimizing EOT becomes essential to maintain proper control over the flow of electrons, ensuring efficient and reliable transistor operation.

How to Calculate Equivalent Oxide Thickness?

Equivalent Oxide Thickness calculator uses Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material) to calculate the Equivalent Oxide Thickness, The Equivalent Oxide Thickness is defined as a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device, such as a MOSFET. Equivalent Oxide Thickness is denoted by EOT symbol.

How to calculate Equivalent Oxide Thickness using this online calculator? To use this online calculator for Equivalent Oxide Thickness, enter Thickness of Material (t_high-k) & Dielectric Constant of Material (k_high-k) and hit the calculate button. Here is how the Equivalent Oxide Thickness calculation can be explained with given input values -> 1.5E+10 = 8.5E-09*(3.9/2.26).

FAQ

What is Equivalent Oxide Thickness?

The Equivalent Oxide Thickness is defined as a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device, such as a MOSFET and is represented as EOT = t_high-k*(3.9/k_high-k) or Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material). Thickness of Material is the thickness of the given material. It refers to the physical dimension of an object measured perpendicular to its surface & Dielectric Constant of Material is a measure of a material's ability to store electrical energy in an electric field.

How to calculate Equivalent Oxide Thickness?

The Equivalent Oxide Thickness is defined as a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device, such as a MOSFET is calculated using Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material). To calculate Equivalent Oxide Thickness, you need Thickness of Material (t_high-k) & Dielectric Constant of Material (k_high-k). With our tool, you need to enter the respective value for Thickness of Material & Dielectric Constant of Material and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search