Depth of Focus Calculator

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✖Proportionality Factor is a constant that relates two key parameters: the critical dimension (CD) and the exposure dose.ⓘ Proportionality Factor [k₂]			+10% -10%
✖Wavelength in Photolithography refers to the specific range of electromagnetic radiation employed to pattern semiconductor wafers during the semiconductor fabrication process.ⓘ Wavelength in Photolithography [λ_l]			+10% -10%
✖Numerical Aperture of an Optical System is a parameter used in optics to describe the ability of an optical system. In the context of semiconductor manufacturing and photolithography.ⓘ Numerical Aperture [NA]			+10% -10%

✖Depth of Focus is a critical parameter that influences the tolerance to variations in the height of the semiconductor wafer.ⓘ Depth of Focus [DOF]

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Formula

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Depth of Focus

Formula

`"DOF" = "k"_{"2"}*"λ"_{"l"}/("NA"^2)`

Example

`"1.301331μm"="3"*"223nm"/(("0.717")^2)`

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Depth of Focus Solution

STEP 0: Pre-Calculation Summary

Formula Used

Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)
DOF = k₂*λ_l/(NA^2)
This formula uses 4 Variables

Variables Used

Depth of Focus - (Measured in Meter) - Depth of Focus is a critical parameter that influences the tolerance to variations in the height of the semiconductor wafer.
Proportionality Factor - Proportionality Factor is a constant that relates two key parameters: the critical dimension (CD) and the exposure dose.
Wavelength in Photolithography - (Measured in Meter) - Wavelength in Photolithography refers to the specific range of electromagnetic radiation employed to pattern semiconductor wafers during the semiconductor fabrication process.
Numerical Aperture - Numerical Aperture of an Optical System is a parameter used in optics to describe the ability of an optical system. In the context of semiconductor manufacturing and photolithography.

STEP 1: Convert Input(s) to Base Unit

Proportionality Factor: 3 --> No Conversion Required
Wavelength in Photolithography: 223 Nanometer --> 2.23E-07 Meter (Check conversion here)
Numerical Aperture: 0.717 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

DOF = k₂*λ_l/(NA^2) --> 3*2.23E-07/(0.717^2)

Evaluating ... ...

DOF = 1.30133109247621E-06

STEP 3: Convert Result to Output's Unit

1.30133109247621E-06 Meter -->1.30133109247621 Micrometer (Check conversion here)

FINAL ANSWER

1.30133109247621 ≈ 1.301331 Micrometer <-- Depth of Focus

(Calculation completed in 00.004 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

Depth of Focus Formula

Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)
DOF = k₂*λ_l/(NA^2)

Why is Depth of Focus important in photolithography?

Depth of Focus is crucial in photolithography because it determines the tolerance to variations in the wafer surface. A larger depth of focus allows for more flexibility in the manufacturing process, compensating for variations in the wafer's flatness.

How to Calculate Depth of Focus?

Depth of Focus calculator uses Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2) to calculate the Depth of Focus, The Depth of Focus is defined as a critical parameter that influences the tolerance to variations in the height of the semiconductor wafer. It's the range of distances in front of and behind the focal plane where objects appear sufficiently sharp in an image. Depth of Focus is denoted by DOF symbol.

How to calculate Depth of Focus using this online calculator? To use this online calculator for Depth of Focus, enter Proportionality Factor (k₂), Wavelength in Photolithography (λ_l) & Numerical Aperture (NA) and hit the calculate button. Here is how the Depth of Focus calculation can be explained with given input values -> 1.3E+12 = 3*2.23E-07/(0.717^2).

FAQ

What is Depth of Focus?

The Depth of Focus is defined as a critical parameter that influences the tolerance to variations in the height of the semiconductor wafer. It's the range of distances in front of and behind the focal plane where objects appear sufficiently sharp in an image and is represented as DOF = k₂*λ_l/(NA^2) or Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2). Proportionality Factor is a constant that relates two key parameters: the critical dimension (CD) and the exposure dose, Wavelength in Photolithography refers to the specific range of electromagnetic radiation employed to pattern semiconductor wafers during the semiconductor fabrication process & Numerical Aperture of an Optical System is a parameter used in optics to describe the ability of an optical system. In the context of semiconductor manufacturing and photolithography.

How to calculate Depth of Focus?

The Depth of Focus is defined as a critical parameter that influences the tolerance to variations in the height of the semiconductor wafer. It's the range of distances in front of and behind the focal plane where objects appear sufficiently sharp in an image is calculated using Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2). To calculate Depth of Focus, you need Proportionality Factor (k₂), Wavelength in Photolithography (λ_l) & Numerical Aperture (NA). With our tool, you need to enter the respective value for Proportionality Factor, Wavelength in Photolithography & Numerical Aperture and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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